| 1. | Compound semiconductor materials
化合物半导体材料 |
| 2. | Binary compound semiconductor
二元化合物半导体 |
| 3. | 5 . a formula is deduced to calculate the built - in voltage of the compound semiconductor
通过推导，得出一个计算化合物半导体异质结内建电势的公式。 |
| 4. | Zinc oxide is a ii - vi wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure
氧化锌( zno )是一种具有六方结构的?族宽带隙半导体材料，室温下带隙宽度高达3 . 3ev 。 |
| 5. | Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure
氧化锌( zno )是一种具有六方结构的的宽禁带-族半导体材料，室温下能带带隙eg为3 . 37ev 。 |
| 6. | Zinc oxide is a ii - iv wide band - gap ( eg = 3 . 37ev ) compound semiconductor with wurtzite crystal structure
六角纤锌矿结构的氧化锌是一种重要的宽带隙-族半导体材料，室温下带隙为3 . 37ev 。 |
| 7. | Plasma etching has been widely used in the etching process of si devices . now the study is focused on the microfabrication of compound semiconductor
等离子体干法刻蚀在硅器件的微细加工中已经得到广泛应用，目前研究的焦点集中在化合物半导体。 |
| 8. | Research advances and applications of direct wafer bonding of - v compound semiconductors in optoelectronics device and its integration are generalized
概括介绍了近年来- v族化合物半导体材料键合技术的最新研究进展及其在光电子器件和集成领域的应用。 |
| 9. | It is the only one compound semiconductor whose native oxide is sio2 . therefore , the sic devices can be manufactured using the technology of the silicon processing , for example mos devices
Sic是唯一可以氧化生长成sio _ 2的化合物半导体材料，这使得它可以运用si平面工艺条件进行sic器件的制造，特别制作mos器件方面。 |
| 10. | Led stands for light emitting diode , a kind of semiconductor which is used to give and receive the electronic signal into infrared rays or light , using the characteristics of compound semiconductor
半导体技术已经改变了世界，半导体照明技术将再一次改变我们的世界。随着半导体照明光源在城市景观商业大屏幕交通信号灯手机及 |
